Wafer stacking structure and method of manufacturing the same
AssigneeIndustrial Technology Research Institute
InventorsCHUNG-CHIH WANG, CHA-HSIN LIN, TZU-KUN KU
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Abstract
A wafer stacking structure includes a first wafer and a second wafer. The first wafer includes a first through silicon via (TSV) opening and a first TSV filling portion formed in the first TSV opening and including a concave structure. The second wafer includes a second TSV opening and a second TSV filling portion formed in the second TSV opening and including a convex structure. A front surface of the first wafer faces a front surface of the second wafer, and the convex structure of the second TSV filling portion is inserted into the concave structure of the first TSV filling portion.
Claims23
A method of manufacturing a wafer stacking structure, the method comprising;
- forming a first through silicon via (TSV) opening in a first wafer;
- filling a first conductive material in the first TSV opening to form a first TSV filling portion having a concave structure;
- forming a second TSV opening in a second wafer;
- filling a second conductive material in the second TSV opening to form a second TSV filling portion having a convex structure;
- and
- stacking the first wafer with the second wafer, with the convex structure being inserted into the concave structure, and the first TSV filling portion being electrically connected with the second TSV filling portion.
A wafer stacking structure, comprising:
- a first wafer including:
- a first through silicon via (TSV) opening penetrating from a front surface to a back surface of the first wafer;
- and
- a first TSV filling portion formed inside the first TSV opening and including a concave structure on a front surface of the first TSV filling portion;
- and
- a second wafer including:
- a second TSV opening penetrating from a front surface to a back surface of the second wafer;
- and
- a second TSV filling portion formed inside the second TSV opening and including a convex structure on a front surface of the second TSV filling portion,
- the front surface of the first wafer facing the front surface of the second wafer, and the convex structure of the second TSV filling portion being inserted into the concave structure of the first TSV filling portion.
A method of manufacturing a wafer, comprising:
- forming a through silicon via (TSV) opening on the wafer;
- and
- filling a conductive material in the opening by electroplating to form a TSV filling portion having a concave structure or a convex structure.
Dependencies are inferred from the claim text.