Method of Forming an Asymmetric MIMCAP or a Schottky Device as a Selector Element for a Cross-Bar Memory Array
AssigneeIntermolecular, Inc.
InventorsVenkat Ananthan, Imran Hashim, Prashant B. Phatak
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Abstract
MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a low defect dielectric layer, a high defect dielectric layer, sandwiched between two electrodes having different work function values.
Claims20
A method to form a device, the method comprising
- forming a first layer, wherein the first layer is operable as an electrode;
- forming a second layer on the first layer, wherein the second layer comprises a dielectric layer;
- forming a third layer on the second layer, wherein the third layer comprises a dielectric layer, wherein the third layer has more defects than the second layer;
- forming a fourth layer on the third layer, wherein the fourth layer is operable as an electrode;
- wherein the layers are operable to have a higher current flow when biased in a first polarity and a lower current flow when biased in a second polarity.
A method to form a device, the method comprising
- forming a first layer, wherein the first layer is operable as an electrode;
- forming a second layer on the first layer, wherein the second layer comprises a dielectric material;
- annealing the second layer to reduce the level of defects in the second layer;
- forming a third layer on the second layer, wherein the third layer comprises the dielectric material, wherein the third layer has more defects than the second layer;
- forming a fourth layer on the third layer, wherein the fourth layer is operable as an electrode, wherein the fourth layer comprises a material having lower work function than that of the first layer;
- wherein the layers are operable to have a higher current flow when biased in a first polarity and a lower current flow when biased in a second polarity.
A device comprising
- a first layer disposed on a substrate, wherein the first layer is operable as a first electrode;
- a second layer disposed on the first layer, wherein the second layer comprises a dielectric material, wherein the second layer is heat treated to reduce the level of defects in the second layer;
- a third layer disposed on the second layer, wherein the third layer comprises the dielectric material, wherein the third layer has more defects than the second layer;
- a fourth layer disposed on the third layer, wherein the fourth layer is operable as an electrode, wherein the fourth layer comprises a material having lower work function than that of the first layer;
- wherein the layers are operable to have a higher current flow when biased in a first polarity and a lower current flow when biased in a second polarity.
Dependencies are inferred from the claim text.