US 2014/0175602 A1 · SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract

Characteristics of a semiconductor device are improved. A semiconductor device has a laminated insulating film formed above a lower-layer inductor. This laminated insulating film includes a first polyimide film, and a second polyimide film formed on the first polyimide film and having a second step between the first polyimide film and the second polyimide film. An upper-layer inductor is formed on the laminated insulating film. Since such a laminated structure of the first and second polyimide films is adopted, the film thickness of the insulating film between the lower-layer and upper-layer inductors can be increased, so that withstand voltage can be improved. Further, the occurrence of a depression or peeling-off due to defective exposure can be reduced, and step disconnection of a Cu (copper) seed layer or a plating defect due to the step disconnection can also be reduced.

Claims20

Dependent claims

A semiconductor device comprising:

a semiconductor substrate having a main surface;
a first insulating film formed on the main surface;
a first coil formed on the first insulating film;
a second insulating film formed on the first coil and having a first main surface and first side surfaces continuous with the first main surface;
a third insulating film formed on the first main surface of the second insulating film and having a second main surface and second side surfaces continuous with the second main surface;
and
a second coil formed on the second main surface of the third insulating film,
wherein the second insulating film and the third insulating film are formed as a laminated insulating film together, having a first step formed by the first main surface and the second main surface via the second side surfaces.

5 more elements

A method of manufacturing a semiconductor device comprising the steps of:

(a) forming an active element in a first region of a semiconductor substrate;
(b) forming a wiring in the first region of the semiconductor substrate and forming a first coil in a second region of the semiconductor substrate;
(c) forming a first insulating film on the wiring and the first coil;
(d) forming a laminated insulating film on the first insulating film on the first coil of the second region of the semiconductor substrate, the step (d) including the steps of:
(d1) forming a second insulating film on the first insulating film;
and
(d2) forming a third insulating film on the second insulating film, the third insulating film being formed so as to have a step between the second insulating film and the third insulating film;
and
(e) forming a second coil on the laminated insulating film and forming a rewiring extended on the first insulating film from a first pad region opened in the first insulating film on the wiring.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of manufacturing the same

Life of this patent

Semiconductor device and method of manufacturing the same

Life of this patent

Abstract

Claims20