Super Junction Semiconductor Device

A super junction semiconductor device, comprising:

• a substrate layer of a first conductivity type;
• and
• an epitaxial layer adjoining the substrate layer and comprising first columns of the first conductivity type and second columns of a second conductivity type, which is the opposite of the first conductivity type, the first and second columns extending along a main crystal direction from a first surface opposite to the substrate layer into the epitaxial layer and having vertical dopant profiles perpendicular to the first surface, wherein
• the vertical dopant profile of at least one of the first and second columns includes first portions separated by second portions, in each of the first portions a dopant concentration varies by at most 30% of a maximum value within the respective first portion, in the second portions the dopant concentration is lower than in the adjoining first portions, and a ratio of a total length of the first portions to a total length of the first and second portions is at least 50%.