Getter structure for wafer level vacuum packaged device

A method for forming a getter structure, comprising:

• forming trench in a surface of a substrate to form a protrusion on the surface;
• depositing getter material by physical vapor deposition from an evaporating source of the getter material at an oblique angle to the sidewalls, atoms of the getter material initially forming nucleation sites on the sidewalls with subsequent atoms attaching to the nucleation sites and shadowing area surrounding each nucleation site, the getter material thereby growing into a plurality of structures towards the evaporating source.

A getter structure, comprising:

• a substrate having a protrusion formed on a surface thereof;
• a plurality of getter material members projecting outwardly from a sidewall of the protrusion.

A method for forming a getter structure, comprising:

• forming a protrusion on a surface of a substrate;
• depositing getter material by physical vapor deposition from an evaporating source of the getter material at an oblique angle to the sidewalls, atoms of the getter material initially forming nucleation sites on the sidewalls with subsequent atoms attaching to the nucleation sites and shadowing area surrounding each nucleation site, the getter material thereby growing into structures towards the evaporating source.