Method for manufacturing light-receiving device and light-receiving device

A method for manufacturing a light-receiving device, the method comprising the steps of:

• forming a stacked semiconductor layer including a non-doped light-receiving layer on a substrate, the light-receiving layer having an n-type conductivity;
• forming a selective growth mask made of an insulating film on the stacked semiconductor layer, the selective growth mask having a pattern including a plurality of openings;
• selectively growing a selective growth layer doped with a p-type impurity on a portion of the stacked semiconductor layer that is exposed through each of the openings using the selective growth mask;
• and
• forming a p-n junction in a region of the light-receiving layer by diffusing the p-type impurity doped in the selective growth layer into the light-receiving layer,
• wherein the p-n junction is formed during growing the selective growth layer,
• each of the regions including the p-n junctions corresponds to one of the selective growth layers, and
• the p-n junction in one of the regions of the light-receiving layer is formed separately from the p-n junctions in the other regions of the light-receiving layer.