Perpendicular spin transfer torque memory (sttm) device having offset cells and method to form same

-5. (canceled)

The STTM array of claim 4, wherein each of the first and third STTM devices has a width of approximately 40 nanometers, and the first and third STTM devices are laterally spaced from one another by a distance of approximately 60 nanometers.

-24. (canceled)

A spin torque transfer memory (STTM) array, comprising:

• a first load line disposed above a substrate and having only a first STTM device;
• and
• a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device, wherein each of the first and second STTM devices has a width, and the first and second STTM devices are laterally spaced from one another by an amount less than the width, and wherein the first and second STTM devices are offset by an amount greater than the width in a direction perpendicular to the substrate.

A spin torque transfer memory (STTM) array, comprising:

• a first load line disposed above a substrate and having only a first STTM device;
• and
• a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device, wherein each of the first and second STTM devices has a width of approximately 40 nanometers, and the first and second STTM devices are laterally spaced from one another by a distance of approximately 10 nanometers, and wherein the first and second STTM devices are offset by an amount of approximately 100 nanometers in a direction perpendicular to the substrate.

A spin torque transfer memory (STTM) array, comprising:

• a first load line disposed above a substrate and having only a first STTM device;
• and
• a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device, wherein each STTM device includes a free magnetic layer comprising iron (Fe) atoms, and includes a dielectric layer comprising magnesium oxide (MgO) below the free magnetic layer, wherein at least a portion of the Fe atoms at an interface between the dielectric layer and the free magnetic layer are oxidized, and the interface between the dielectric layer and the free magnetic layer provides a perpendicular magnetic component for the STTM device.