Diffusionless transformations in mtj stacks
AssigneeSamsung Electronics Co., Ltd.
InventorsKeith Chan, Alexey Vasilyevitch Khvalkovskiy, Dmytro Apalkov
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Abstract
A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a plurality of magnetic layers including a nonmagnetic spacer layer. The magnetic junction also includes at least one diffusionless transformation layer. The magnetic junction is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Claims33
A magnetic junction for use in a magnetic device comprising:
- a nonmagnetic spacer layer;
- and
- at least one diffusionless transformation layer;
- wherein the magnetic junction is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
A magnetic memory comprising:
- a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction, the at least one magnetic junction including a plurality of layers, the plurality of layers including a nonmagnetic spacer layer and at least one diffusionless transformation layer, the magnetic junction being configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction;
- and
- a plurality of bit lines.
A method for providing a magnetic junction for use in a magnetic device comprising:
- providing a plurality of magnetic layers including a nonmagnetic spacer layer;
- and
- providing at least one diffusionless transformation layer;
- wherein the magnetic junction is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
A method for providing a magnetic junction for use in a magnetic device comprising:
- providing a plurality of layers including a nonmagnetic spacer layer;
- and
- providing at least one diffusionless transformation layer;
- wherein the magnetic junction is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Dependencies are inferred from the claim text.