Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctions
AssigneeSamsung Electronics Co., Ltd.
InventorsDmytro Apalkov, Alexey Vasilyevitch Khvalkovskiy, Vladimir Nikitin, Steven M. Watts
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Abstract
A method and system provide a magnetic junction usable in a magnetic device and which resides on a substrate. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer, the nonmagnetic spacer layer and the reference layer form nonzero angle(s) with the substrate. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Claims52
A magnetic junction for use in a magnetic device and residing on a substrate, the magnetic junction comprising:
- a reference layer;
- a nonmagnetic spacer layer;
- and
- a free layer, the nonmagnetic spacer layer residing between the free layer and the reference layer, the free layer, the nonmagnetic spacer layer and the reference layer forming at least one nonzero angle with the substrate;
- wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
A magnetic junction for use in a magnetic device and residing on a substrate, the magnetic junction comprising:
- a free layer including at least one cylindrical sidewall substantially perpendicular to the substrate;
- a nonmagnetic spacer layer adjacent to the at least one cylindrical sidewall and having a cylindrical geometry, the nonmagnetic spacer layer being a tunneling barrier layer;
- a reference layer, the nonmagnetic spacer layer residing between the free layer and the reference layer, the reference layer having a substantially cylindrical geometry;
- wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
A magnetic memory comprising:
- a substrate having a top surface;
- a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction, the at least one magnetic junction including a reference layer, a nonmagnetic spacer layer and a free layer, the nonmagnetic spacer layer residing between the free layer and the reference layer, the free layer, the nonmagnetic spacer layer and the reference layer forming at least one nonzero angle with the substrate, the magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction;
- and
- a plurality of bit lines.
A method for providing a magnetic junction on a substrate for use in a magnetic device comprising:
- providing a free layer;
- providing a nonmagnetic spacer layer;
- and
- providing a reference layer, the nonmagnetic spacer layer residing between the free layer and the reference layer, the free layer, the nonmagnetic spacer layer and the reference layer forming at least one nonzero angle with the substrate;
- wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Dependencies are inferred from the claim text.