Soi wafer, manufacturing method therefor, and mems device
AssigneeMitsubishi Electric Corporation
InventorsEiji YOSHIKAWA, Jyunichi ICHIKAWA, Yukihisa YOSHIDA
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Abstract
In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.
Claims5
A SOI wafer, comprising:
- two silicon wafers bonded together with an oxide film therebetween;
- a cavity formed in a bonding surface of at least one of the two silicon wafers;
- and
- a gettering material formed on a surface on a side opposite to the bonding surface.
Dependencies are inferred from the claim text.