Replacement source/drain finfet fabrication
AssigneeAdvanced Ion Beam Technology, Inc.
InventorsDaniel TANG, Tzu-Shih YEN
Life of this patent
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Abstract
A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor.
Claims8
1-11. (canceled)
A finFET on a semiconductor substrate, the finFET comprising:
- a channel region having a first side protruding from the semiconductor substrate and a second side opposite the first side and protruding from the semiconductor substrate;
- a gate stack overlaying the channel region, wherein the gate stack includes an insulating layer in direct contact with the first and second sides of the channel region, and wherein the gate stack includes a conductive gate material directly contacting the insulating layer.
- a source epitaxy region of semiconductor epitaxially grown on the channel region, wherein the source epitaxy region is in-situ doped;
- and
- a drain epitaxy region of semiconductor epitaxially grown on a the channel region away from the source epitaxy region, wherein the drain epitaxy region is in-situ doped.
Dependencies are inferred from the claim text.