Back to results
US 2014/0175567 A1Published application
Method of Depositing Films with Narrow-Band Conductive Properties
AssigneeIntermolecular, Inc.
InventorsSergey Barabash, Dipankar Pramanik
Life of this patent
Estimating the term…
Abstract
Conducting materials having narrow impurity conduction bands can reduce the number of high energy excitations, and can be prepared by a sequence of plasma treatments. For example, a dielectric layer can be exposed to a first plasma ambient to form vacancy sites, and the vacancy-formed dielectric layer can be subsequently exposed to a second plasma ambient to fill the vacancy sites with substitutional impurities.
Claims20
A method comprising
- providing a dielectric layer on a substrate;
- exposing the dielectric layer to a first plasma,
- wherein the first plasma is operable to remove between 1 at % and 10 at % of the atoms in the dielectric layer, thereby creating vacancies;
- exposing the dielectric layer to a second plasma,
- wherein the second plasma comprises ions which are captured by the vacancies.
2 more elements
A material comprising
- a dielectric layer,
- wherein the dielectric layer comprises materials having band gap energy greater than 2 eV,
- wherein the dielectric layer comprises an impurity band, wherein the impurity band is positioned at an energy level within the band gap energy,
- wherein the impurity band is substantially narrower than the conduction band of a metal material.
1 more element
A device comprising
- a dielectric layer,
- wherein the dielectric layer comprises materials having band gap energy greater than 2 eV,
- wherein the dielectric layer comprises an impurity band, wherein the impurity band is positioned at an energy level within the band gap energy,
- wherein the impurity band is narrower than the conduction band of a metal material.
1 more element
Dependencies are inferred from the claim text.