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US 2014/0175566 A1Published application
Converting a high dielectric spacer to a low dielectric spacer
OwnerGopinath Bhimarasetti, Walid M. Hafez +1inventors
InventorsGopinath Bhimarasetti, Walid M. Hafez, Weimin C. Han
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Abstract
A dielectric constant of spacer material in a transistor is changed from a high-κ dielectric material to a low-κ dielectric material. The process uses oxidation treatments to enable the transformation of the high-κ dielectric material to a low-κ dielectric material.
Claims10
A method of converting dielectric constant of a spacer in a transistor comprising:
- removing a sacrificial gate to expose a high-κ dielectric spacer;
- oxidizing the high-κ dielectric spacer to form a low-κ dielectric spacer;
- removing a sacrificial gate dielectric to expose an underlying surface;
- depositing a high-κ gate dielectric on the exposed surface;
- and
- depositing a metal gate electrode atop the high-κ gate dielectric.
3 more elements
-15. (canceled)
Dependencies are inferred from the claim text.