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US 2014/0175564 A1Published application
Finfet device
AssigneeInternational Business Machines Corporation
InventorsShahid A. Butt, Robert C. Wong
Life of this patent
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Abstract
A method for forming a field effect transistor device includes patterning an arrangement of fin portions on a substrate, patterning a gate stack portion over portions of the fin portions and the substrate, growing an epitaxial material from the fin portions that electrically connects portions of adjacent fin structures, and removing a portion of the gate stack portion to expose a portion of the substrate.
Claims6
A field effect transistor device comprising:
- an arrangement of fin portions disposed on a substrate;
- a first gate stack portion arranged over the arrangement of fin portions and portions of the substrate;
- a first epitaxial material connecting portions of the fin portions arranged in a first region defined by a first side of the first gate stack portion;
- a second epitaxial material connecting portions of the fin portions arranged in a second region defined by a second side of the first gate stack portion;
- and
- a second gate stack portion arranged substantially collinear to the first gate stack portion, the first gate stack portion and the second gate stack portion partially defined by a region of the substrate arranged between the first gate stack portion and the second gate stack portion.
3 more elements
Dependencies are inferred from the claim text.