Semiconductor structure and method for manufacturing the same
AssigneeMacronix International Co., Ltd.
InventorsChing-Lin Chan, Chen-Yuan Lin, Cheng-Chi Lin, Shih-Chin Lien
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Abstract
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a first doped region, a second doped region, and a gate structure. The first doped region has a first type conductivity. The second doped region is formed in the first doped region and has a second type conductivity opposite to the first type conductivity. The gate structure is formed on the first doped region and the second doped region. The gate structure comprises a first gate portion and a second gate portion, which are separated from each other by a gap.
Claims18
A semiconductor structure, comprising:
- a first doped region having a first type conductivity;
- a second doped region formed in the first doped region and having a second type conductivity opposite to the first type conductivity;
- a gate structure formed on the first doped region and the second doped region, comprising a first gate portion and a second gate portion separated from each other by a gap;
- and
- a dielectric layer formed on the gate structure and in direct contact with the first doped region and the second doped region through the gap.
A method for manufacturing a semiconductor structure, comprising:
- forming a first doped region having a first type conductivity;
- forming a second doped region in the first doped region, wherein the second doped region has a second type conductivity opposite to the first type conductivity;
- forming a gate structure on the first doped region and the second doped region, comprising forming a first gate portion and a second gate portion separated from each other by a gap;
- and
- forming a dielectric layer on the gate structure and in direct contact with the first doped region and the second doped region through the gap.
Dependencies are inferred from the claim text.