Semiconductor device having insulating film with different stress levels in adjacent regions and manufacturing method thereof

A semiconductor device having a silicon nitride film with a different tensile stress in adjacent regions thereof, comprising:

• a semiconductor substrate;
• an n-channel type first MISFET formed in a first region of the semiconductor substrate;
• a p-channel type second MISFET formed in an adjacent second region of the semiconductor substrate;
• a first insulating film formed over the semiconductor substrate so as to cover the first and second MISFETs;
• and
• an interlayer insulating film formed over the first insulating film,
• wherein the first insulating film is comprised of silicon nitride and serves as a tensile stress film,
• wherein a hydrogen content of the first insulating film in the first region is substantially equal to that of the first insulating film in the second region, and
• wherein a tensile stress of the first insulating film in the first region is at least twice as large as that of the first insulating film in the second region.