Mos semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsToshitaka MIYATA, Masakazu GOTO, Akira HOKAZONO
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Abstract
According to one embodiment, a MOS semiconductor device comprises a first gate insulating film formed on a region of part of a channel of a semiconductor substrate, in which a transistor is to be formed, a first gate electrode formed on the first gate insulating film, a second gate insulating film formed on remaining part of the channel, the second gate insulating film including an impurity added to the second gate insulating film to increase a threshold value of the channel immediately under the second gate insulating film, and a second gate electrode formed on the second gate insulating film.
Claims20
A MOS semiconductor device, comprising:
- a first gate insulating film formed on a region of part of a channel of a semiconductor substrate, in which a transistor is to be formed;
- a first gate electrode formed on the first gate insulating film;
- a second gate insulating film formed on remaining part of the channel, the second gate insulating film including an impurity added to the second gate insulating film to increase a threshold value of the channel immediately under the second gate insulating film;
- and
- a second gate electrode formed on the second gate insulating film.
A MOS semiconductor device, comprising:
- a first gate insulating film formed on a region of part of a channel of a semiconductor substrate, in which a transistor is to be formed;
- a first gate electrode formed on the first gate insulating film;
- a second gate insulating film formed on remaining part of the channel and having a thickness less than that of the first gate insulating film, the second gate insulating film including an impurity added to the second gate insulating film to increase a threshold value of the channel immediately under the second gate insulating film;
- and
- a second gate electrode formed on the second gate insulating film.
A method of manufacturing a MOS semiconductor device, comprising:
- forming a first gate electrode on a region of part of a channel of a semiconductor substrate, with a first gate insulating interposed between the first gate electrode and the region, in which a transistor is to be formed;
- forming a second gate insulating film on remaining part of the channel,
- adding an impurity to the second gate insulating film to increase a threshold value of the channel immediately under the second gate insulating film;
- and
- forming a second gate electrode on the second gate insulating film, to which the impurity has been added.
Dependencies are inferred from the claim text.