Device structures compatible with fin-type field-effect transistor technologies
AssigneeInternational Business Machines Corporation
InventorsRobert J. Gauthier, JR., Jeffrey B. Johnson, Junjun Li
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Abstract
Device structures, design structures, and fabrication methods for fin-type field-effect transistor integrated circuit technologies. First and second fins, which constitute electrodes of the device structure, are each comprised of a first semiconductor material. The second fin is formed adjacent to the first fin to define a gap separating the first and second fins. Positioned in the gap is a layer comprised of a second semiconductor material.
Claims20
A device structure comprising:
- a first fin comprised of a first semiconductor material;
- a second fin comprised of the first semiconductor material, the second fin adjacent to the first fin to define a gap separating the first fin from the second fin;
- and
- a first layer comprised of a second semiconductor material, the first layer positioned in the gap between the first fin and the second fin,
- wherein the first fin is a first electrode of the device structure and the second fin is a second electrode of the device structure.
A design structure readable by a machine used in design, manufacture, or simulation of an integrated circuit, the design structure comprising:
- a first fin comprised of a first semiconductor material;
- a second fin comprised of the first semiconductor material, the second fin adjacent to the first fin to define a gap separating the first fin and the second fin;
- and
- a layer comprised of a second semiconductor material, the layer positioned in the gap between the first fin and the second fin,
- wherein the first fin and the second fin are electrodes of a device structure.
Dependencies are inferred from the claim text.