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US 2014/0175547 A1Published application
Semiconductor device having varying p-top and n-grade regions
AssigneeMacronix International Co., Ltd.
InventorsChing-Lin Chan, Chen-Yuan Lin, Cheng-Chi Lin, Shih-Chin Lien
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Abstract
An improved semiconductor is provided whereby n-grade and the p-top layers are defined by a series of discretely placed n-type and p-type diffusion segments. Also provided are methods for fabricating such a semiconductor.
Claims21
A semiconductor comprising:
- a p-substrate;
- a high voltage n-well (HVNW) disposed in the p-substrate;
- a first p-well formed in the p-substrate having a first p+ doped region;
- a second p-well formed in the HVNW having a second p+ doped region adjacent to an n+ doped source region;
- and
- a discrete n-grade and p-top region disposed in the HVNW, the discrete n-grade and p-top region having one or more layers defined by a plurality of p-top segments dispersed among a plurality of n-grade segments.
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A method for fabricating a semiconductor comprising:
- providing a p-substrate layer;
- forming a high voltage n-well (HVNW) into the p-substrate;
- forming a first p-well in the p-substrate;
- forming a second p-well in the HVNW;
- and
- forming a discrete n-grade and p-top region in the HVNW, the discrete p-top region having one or more layers defined by a plurality of p-top segments dispersed among a plurality of n-grade segments.
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Dependencies are inferred from the claim text.