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US 2014/0175542 A1Published application
Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-June JANG, Hyun-Ju KIM, Seo-In PARK
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Abstract
A semiconductor device includes a gate pattern over source and drain regions. The gate pattern includes a first gate adjacent the source region and a second gate adjacent the drain region. A concentration of dopants in the first gate is higher than a concentration of dopants in the second gate. As a result, channels are produced between the source and drain regions based on different threshold voltages.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a drain region in the semiconductor substrate;
- a body region in the semiconductor substrate and spaced from the drain region;
- a source region in the body region;
- and
- a gate pattern on the semiconductor substrate and including dopants of a first conductivity type, wherein the gate pattern includes a first gate adjacent the source region and a second gate adjacent the drain region, and wherein a concentration of the dopants of the first conductivity type in the first gate is higher than a concentration of the dopants of the first conductivity type in the second gate.
3 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a source region in the semiconductor substrate;
- a drain region in the semiconductor substrate and spaced from the source region;
- a first gate on the semiconductor substrate and disposed between the source region and the drain region;
- and
- a second gate disposed on the semiconductor substrate, wherein the second gate is between the first gate and the drain region, and wherein a conductivity of the second gate is different from a conductivity of the first gate.
3 more elements
A semiconductor device, comprising:
- a drain;
- a source;
- and
- a gate pattern between the source and drain, wherein:
- the gate pattern includes a first gate configured to form a first channel, and a second gate configured to form a second channel,
- the first gate is disposed adjacent the source,
- the second gate is disposed between the first gate and the drain, and
- a first threshold voltage of the first channel is higher than a second threshold voltage of the second channel.
5 more elements
Dependencies are inferred from the claim text.