Semiconductor apparatus and fabrication method thereof
AssigneeSK hynix Inc.
InventorsHyun Seok KANG, Jeong Tae KIM
Life of this patent
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Abstract
A semiconductor apparatus includes a semiconductor substrate and a semiconductor layer extending along the substrate in a first direction and connecting to the semiconductor substrate, the semiconductor layer having a portion that connects to the semiconductor substrate, and a portion that does not connect to the semiconductor substrate and forms an active region floating over the semiconductor substrate. A word line formed on the active region and extends in a direction perpendicular to the first direction. Junction regions formed in the active region at both sides of the word line; and an air gap formed in a floating region between the semiconductor substrate and the active region.
Claims8
A semiconductor apparatus, comprising:
- a semiconductor substrate;
- a semiconductor layer extending along the substrate in a first direction and connecting to the semiconductor substrate, the semiconductor layer having a portion that connects to the semiconductor substrate, and a portion that does not connect to the semiconductor substrate and forms an active region floating over the semiconductor substrate;
- a word line formed on the active region and extending in a direction perpendicular to the first direction;
- junction regions formed in the active region at both sides of the word line;
- and
- an air gap formed in a floating region between the semiconductor substrate and the active region.
A method of fabricating a semiconductor apparatus, the method comprising:
- forming a sacrificial layer on a semiconductor substrate;
- forming a semiconductor layer on the sacrificial layer;
- forming, through the sacrificial layer, a source post connecting the semiconductor layer to the semiconductor substrate;
- patterning the semiconductor layer to define an active region extending in a first direction;
- forming, in a direction perpendicular to the first direction, a gate structure on the active region;
- removing the sacrificial layer to form a silicon-on-insulating (SOI) region between the semiconductor layer and the semiconductor substrate;
- and
- forming an interlayer insulating layer in a space between the gate structure and an adjacent gate structure to form an air gap in the SOI region.
Dependencies are inferred from the claim text.