Nonvolatile memory device and method for fabricating the same
AssigneeSK hynix Inc.
InventorYoung-Jun KWON
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device includes a memory gate including a memory layer provided over a substrate and a gate electrode provided over the memory layer, the memory gate having first and second opposing sidewalls disposed on first and second sides of the memory gate, respectively; first and second select gates disposed on the first and second sidewalls of the memory gate; a source region formed in the substrate proximate to the first side of the memory gate; a drain region formed in the substrate proximate to the second side of the memory gate; and a gate contact coupled to the gate electrode of the memory gate and to the first select gate, or the second select gate, or both.
Claims19
A nonvolatile memory device comprising:
- a memory gate including a memory layer provided over a substrate and a gate electrode provided over the memory layer, the memory gate having first and second opposing sidewalls disposed on first and second sides of the memory gate, respectively;
- first and second select gates disposed on the first and second sidewalls of the memory gate;
- a source region formed in the substrate proximate to the first side of the memory gate;
- a drain region formed in the substrate proximate to the second side of the memory gate;
- and
- a gate contact coupled to the gate electrode of the memory gate and to the first select gate, or the second select gate, or both.
A nonvolatile memory device comprising:
- a substrate having a plurality of active regions, the active regions extending along a first direction;
- a plurality of memory gates, each including a memory layer and a gate electrode which are stacked over the substrate;
- a plurality of select gates, each formed on at least two opposing sidewalls of one of the memory gates;
- a plurality of gate contacts, each coupling one of the gate electrodes with corresponding the select gates;
- a plurality of word lines, each extending along a second direction different from the first direction;
- a plurality of source regions, each formed in the substrate proximate to a first side of the memory gates;
- a plurality of drain regions, each formed in the substrate proximate to a second side of the memory gates;
- a plurality of bit lines extending along the first direction, each of the bit lines being connected to one of the drain regions;
- and
- a plurality of source lines, each of the source lines being connected to one of the source regions.
A nonvolatile memory device, comprising:
- a substrate;
- a first well provided in the substrate;
- and
- a plurality of memory cells provided on the first well, each memory cell including:
- a memory gate including a memory layer and a gate electrode provided over the memory layer, the memory gate having first and second opposing sidewalls;
- first and second select gates disposed on the first and second sidewalls of the memory gate;
- a source region formed in the substrate proximate to the first side of the memory gate;
- and
- a drain region formed in the substrate proximate to the second side of the memory gate.
Dependencies are inferred from the claim text.