Three dimensional nand device with silicide containing floating gates and method of making thereof

A monolithic three dimensional NAND string, comprising:

• a semiconductor channel located over a substrate, at least one end of the semiconductor channel extending substantially perpendicular to a major surface of the substrate;
• a plurality of control gates extending substantially parallel to the major surface of the substrate, wherein the plurality of control gates comprise at least a first control gate located in a first device level and a second control gate located in a second device level located over the substrate and below the first device level;
• a charge storage material comprising a silicide layer located in the first device level and in the second device level;
• a blocking dielectric located between the charge storage material and the plurality of control gates;
• and
• a tunnel dielectric located between the charge storage material and the semiconductor channel;
• wherein:
• the tunnel dielectric has a straight sidewall;
• portions of the blocking dielectric have a clam shape;
• and
• each of the plurality of control gates is located at least partially in an opening in the clam-shaped portion of the blocking dielectric.