Semiconductor device for current control and method thereof
AssigneeMacronix International Co., Ltd.
InventorsKuo Hung Hsieh, Meng Shien Hsieh, Yin Fu Huang, Miao Chun Chung
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Abstract
A semiconductor device where at least one of a portion of the first metal layer that extends from the source contact, a portion of the second metal layer that extends from the source contact, a portion of the first metal layer that extends from the drain contact, and a portion of the second metal layer that extends from the drain contact is configured to lie above a portion of or even all of the gate. Methods of fabricating and using such a semiconductor device are also provided.
Claims16
A semiconductor device comprising:
- a source region and a diametrically opposed drain region, the source region having a source contact and the drain region having a drain contact;
- a gate region disposed between the source region and the drain region, the gate region having a gate;
- and
- one or more metal layers,
- wherein a portion of any of the one or more metal layers lies above at least a portion of the gate.
A semiconductor device comprising:
- a source region and a diametrically opposed drain region, the source region having a source contact and the drain region having a drain contact;
- a gate region disposed between the source region and the drain region, the gate region having a gate;
- and
- at least one metal layer,
- wherein a portion of any one or more of the at least one metal layer extends from one or both of the source contact and the drain contact and lies above at least a portion of the gate.
11-17. (canceled)
A method of fabricating a semiconductor device comprising:
- providing a semiconductor comprising a gate region having a gate, a source region having a source contact, and a drain region having a drain contact;
- forming an interlayer dielectric layer on the semiconductor;
- etching the interlayer dielectric layer to define the source contact and the drain contact;
- depositing a metal layer across the interlayer dielectric layer additionally filling the source contact and the drain contact;
- and
- removing one or more portions of the metal layer to define a first metal layer,
- wherein a portion of the first metal layer extends from at least one of the source contact and the drain contact and lies above at least a portion of the gate.
(canceled)
Dependencies are inferred from the claim text.