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US 2014/0175525 A1Published application
CMOS Integrated Moving-Gate Transducer with Silicon as a Functional Layer
AssigneeRobert Bosch GmbH
InventorsAndo Feyh, Po-Jui Chen, Markus Ulm
Life of this patent
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Abstract
A semiconductor device includes a substrate, a first dielectric layer located above the substrate, a moving-gate transducer, and a proof mass. The moving-gate transducer is at least partially formed within the substrate and is at least partially formed within the first dielectric layer. The proof mass includes a portion of the first dielectric layer and a portion of a silicon layer. The silicon layer is located above the first dielectric layer.
Claims20
A method of fabricating a semiconductor device, comprising:
- forming a first dielectric layer above a substrate, the first dielectric layer including a first dielectric portion and a second dielectric portion;
- forming a bond layer above the first dielectric layer;
- bonding a silicon layer to the bond layer, the silicon layer including a first silicon portion and a second silicon portion;
- releasing the second dielectric portion;
- and
- releasing the second silicon portion, such that a proof mass of the semiconductor device includes the second dielectric portion and the second silicon portion, the proof mass movable with respect to the first dielectric portion and the first silicon portion.
3 more elements
A semiconductor device comprising:
- a first dielectric layer supported by a substrate, the first dielectric layer including a fixed dielectric portion and a proof mass portion;
- a portion of a bond layer supported by the proof mass portion;
- and
- a silicon layer bonded to the bond layer, the silicon layer including a first silicon portion and a second silicon portion, the first silicon portion fixed with respect to the fixed dielectric portion and the second silicon portion moveable with the proof mass portion.
1 more element
A semiconductor device comprising:
- a substrate;
- a first dielectric layer above the substrate;
- a moving-gate transducer at least partially formed within the substrate and at least partially formed within the first dielectric layer;
- and
- a proof mass including a portion of the first dielectric layer and a portion of a silicon layer, the silicon layer located above the first dielectric layer.
2 more elements
Dependencies are inferred from the claim text.