Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus
AssigneeSony Corporation
InventorYuki Miyanami
Life of this patent
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Abstract
A solid-state image pickup device, includes: a semiconductor substrate; a semiconductor layer of a first conductivity type formed in the semiconductor substrate and formed for each pixel; a solid-phase diffusion layer of a second conductivity type formed in a surface portion of the semiconductor substrate, the solid-phase diffusion layer facing the semiconductor layer; and an oxide film containing an impurity element of the second conductivity type and formed by an atomic layer deposition method.
Claims14
A solid-state image pickup device, comprising:
- a semiconductor substrate;
- a semiconductor layer of a first conductivity type formed in the semiconductor substrate and formed for each pixel;
- a solid-phase diffusion layer of a second conductivity type formed in a surface portion of the semiconductor substrate, the solid-phase diffusion layer facing the semiconductor layer;
- and
- an oxide film containing an impurity element of the second conductivity type and formed by an atomic layer deposition method.
A method of manufacturing a solid-state image pickup device, the method comprising:
- forming a semiconductor layer of a first conductivity type for each pixel in a semiconductor substrate;
- forming an oxide film containing an impurity element of a second conductivity type on the semiconductor substrate by an atomic layer deposition method;
- and
- forming a solid-phase diffusion layer of the second conductivity type in a surface portion of the semiconductor substrate, the solid-phase diffusion layer facing the semiconductor layer.
An electronic apparatus with a solid-state image pickup device, the solid-state image pickup device comprising:
- a semiconductor substrate;
- a semiconductor layer of a first conductivity type formed in the semiconductor substrate and formed for each pixel;
- a solid-phase diffusion layer of a second conductivity type formed in a surface portion of the semiconductor substrate, the solid-phase diffusion layer facing the semiconductor layer;
- and
- an oxide film containing an impurity element of the second conductivity type and formed by an atomic layer deposition method.
Dependencies are inferred from the claim text.