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US 2014/0175514 A1Published application
Ring-shaped transistors providing reduced self-heating
AssigneeU.S. Army Research Laboratory ATTN: RDRL-LOC-I
InventorsAli Darwish, Hingloi Alfred Hung
Life of this patent
Estimating the term…
Abstract
A ring-shaped transistor includes a set of gates. Each gate of the set is disposed between a corresponding source and a corresponding drain. The set of gates are arranged such that all of the set of gates cannot be aligned with fewer than three imaginary straight lines drawn through the gates, with one of the imaginary straight lines passing only once though each of the set of gates.
Claims20
A ring-shaped transistor comprising:
- a set of gates, each gate being disposed between a corresponding source and a corresponding drain;
- wherein the set of gates are arranged such that there are different conductive pathways to different gates, and all of the set of gates cannot be aligned with fewer than three imaginary straight lines drawn through the gates, with one of the imaginary straight lines passing only once though each of the set of gates.
(canceled)
A method of fabricating a ring-shaped transistor, the method comprising:
- forming a ring-shaped transistor comprising:
- a set of gates, each gate being disposed between a corresponding source and a corresponding drain;
- wherein the set of gates are arranged such that there are different conductive pathways to different gates, and all of the set of gates cannot be aligned with fewer than three imaginary straight lines drawn through the gates, with one of the imaginary straight lines passing only once though each of the set of gates.
Dependencies are inferred from the claim text.