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US 2014/0175510 A1Published application
Germanium photodetector and method of fabricating the same
AssigneeElectronics and Telecommunications Research Institute
InventorsDongwoo SUH, Sang Hoon KIM, Gyungock KIM, JiHo JOO
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Abstract
Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.
Claims5
-7. (canceled)
A germanium photodetector comprising:
- a germanium epitaxial layer disposed directly on a silicon substrate;
- a first doped layer on the germanium epitaxial layer;
- and
- a second doped layer disposed under the germanium epitaxial layer, the second doped layer having a different conductivity type from the first doped layer.
1 more element
A germanium photodetector comprising:
- a germanium epitaxial layer disposed on a silicon substrate;
- a first doped layer on the germanium epitaxial layer;
- and
- a second doped layer disposed under the germanium epitaxial layer, the second doped layer having a different conductivity type from the first doped layer
- wherein an interface between the silicon substrate and the germanium epitaxial layer is free from a SiGe buffer.
2 more elements
Dependencies are inferred from the claim text.