Led epitaxial structure
AssigneeAdvanced Optoelectronic Technology, Inc.
InventorsPO-MIN TU, SHIH-CHENG HUANG
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Abstract
An LED epitaxial structure includes a substrate, a buffer layer and an epitaxial layer. The buffer layer is grown on a top surface of the substrate, and the epitaxial layer is formed on a surface of the buffer layer. The epitaxial layer has a first n-type epitaxial layer and a second n-type epitaxial layer. The first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer. The first n-type epitaxial layer has a plurality of irregular holes therein. The first n-type epitaxial layer has a doping concentration which varies along a thickness direction of the first n-type epitaxial layer.
Claims7
An LED epitaxial structure, comprising:
- a substrate, a buffer layer, and an epitaxial layer, the buffer layer grown on a top surface of the substrate, and the epitaxial layer grown on a top surface of the buffer layer, wherein the epitaxial layer includes a first n-type epitaxial layer, and a second n-type epitaxial layer, the first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer, the first n-type epitaxial layer has a plurality of irregular holes therein, and the first n-type epitaxial layer has a doping concentration which varies along a thickness direction of the first n-type epitaxial layer.
Dependencies are inferred from the claim text.