Semiconductor light emitting device

A semiconductor light emitting device comprising:

• an n-type semiconductor layer;
• an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer;
• an n-type electrode disposed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and an n-type electrode finger;
• and
• a p-type electrode disposed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and first and second p-type electrode fingers,
• wherein the n-type semiconductor layer, the active layer and the p-type semiconductor layer configure a light emitting structure, the p-type electrode pad is disposed inside of a light emission surface provided when the light emitting structure is viewed from above the p-type semiconductor layer, and the n-type electrode pad is disposed adjacent to an edge of the light emission surface,
• the first p-type electrode finger has a form in which the first p-type electrode finger is extended from the p-type electrode pad to an edge of the light emission surface, opposing an edge on which the n-type electrode pad is located, to then branch in two directions along edges of the light emission surface, and the second p-type electrode finger has a form in which the second p-type electrode finger is extended from the p-type electrode pad in two different directions and the portions thereof extended in two directions are then respectively bent toward the edge at which the n-type electrode pad is located, on the light emission surface, and
• the n-type electrode finger has a form in which the n-type electrode finger is extended from the n-type electrode pad to branch in two directions, along edges of the light emission surface, and then bypasses a position in which the p-type electrode pad is located, and is then bent toward a portion of the first p-type electrode finger extended from the p-type electrode pad to an edge of the light emission surface.