Optoelectronic semiconductor component and scattering body
AssigneeOSRAM Opto Semiconductors GmbH
InventorRalph Wirth
Life of this patent
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Abstract
An optoelectronic semiconductor component includes one or a plurality of optoelectonic semiconductor chips, and at least one scattering body including a radiation-transmissive matrix material and embedded therein scattering particles composed of a particle material and which is disposed downstream of at least one of the semiconductor chips, wherein, in the event of a temperature change, a difference in refractive index between the matrix material and the particle material changes, and the difference in refractive index between the matrix material and the particle material at a temperature of 300 K is at most 0.15.
Claims15
An optoelectronic semiconductor component comprising:
- one or a plurality of optoelectronic semiconductor chips (2), and
- at least one scattering body comprising a radiation-transmissive matrix material and embedded therein scattering particles composed of as particle material and which is disposed downstream of at least one of the semiconductor chips,
- wherein, in the event of a temperature change, a difference in refractive index between the matrix material and the particle material changes, and the difference in refractive index between the matrix material and the particle material at a temperature of 300 K is at most 0.15.
The optoelectronic semiconductor component according to claim, wherein the particle material is transparent and pellucid at a temperature of 300 K to 450 K.
A Light emitting diode comprising:
- one or a plurality of optoelectronic semiconductor chips, and
- at least one scattering body comprising a radiation-transmissive matrix material and embedded therein scattering particles composed of a particle material and which is disposed downstream of at least one of the semiconductor chips, wherein, in the event of a temperature change, a difference in refractive index between the matrix material and the particle material changes,
- the difference in refractive index between the matrix material and the particle material at a temperature of 300 K is at most 0.15,
- at a temperature of 300 K to 375 K. the difference in refractive index between the matrix material and the particle material decreases as the temperature rises,
- at least one temperature of 375 K to 450 K, an average scattering cross section of the scattering particles for radiation generated in the semiconductor chip during operation is at most 25% of the average scattering section of the scattering particles at a temperature of 300 K,
- the matrix material comprises a phenylized silicone,
- the particle material is glass, BaF2, CaF2, LiF or MgF2, and
- an average diameter of the scattering particles is 1.5 μm to 5 μm.
Dependencies are inferred from the claim text.