Method of Manufacturing a Light Emitting Diode Comprising a Layer of AIGaN Heterogeneous
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorBruno Daudin
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Abstract
The process for the manufacture of a light-emitting diode comprises the following stages: the formation of a stack (1) of layers intended to emit light comprising first (2), second (3) and third (4) layers of aluminium gallium nitride, the said second layer (3), positioned between the first and third layers (2, 4), having an aluminium gallium nitride composition different from that of the first and third layers (2, 4); and the implementation of a demixing of the second layer (3) of aluminium gallium nitride carried out after formation of the said second layer.
Claims11
Process for the manufacture of a light-emitting diode, which comprises the following stages:
- the formation of a stack of layers intended to emit light comprising first, second and third layers of aluminium gallium nitride, the said second layer, positioned between the first and third layers, having a different aluminium gallium nitride composition from that of the first and third layers.
- the implementation of a demixing of the second layer of aluminium gallium, nitride carried out after formation of the said second layer.
Dependencies are inferred from the claim text.