Light emitting device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorsChisato Furukawa, Takafumi Nakamura
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Abstract
A light emitting device and a method for manufacturing the same are provided. The light emitting device includes: a first substrate having electrical conductivity; a foundation layer; a bonded metal layer configured to bond one major surface of the foundation layer to the first substrate; a mask layer provided on the other major surface of the foundation layer, having a window, and made of an insulator; and a multilayer body selectively provided on the foundation layer exposed to the window, and including a light emitting layer.
Claims7
1-20. (canceled)
A light emitting element having selectively provided semiconductor comprising:
- a substrate having a first electrical conductivity;
- a foundation layer made of semiconductor having the first conductivity;
- a bonded metal layer configured to bond one major surface of the foundation layer to the substrate;
- a mask layer provided on the other major surface of the foundation layer and made of an insulator, a first window and a second window being provided in the mask layer;
- a semiconductor multilayer body having a first region provided on the foundation layer exposed to the first window and a second region provided on the foundation layer exposed to the second window, and made of an epitaxial film including a light emitting layer, the light emitting layer being higher than an upper surface of the mask layer;
- a lateral growth film provided on the upper surface of the mask layer;
- and
- a first electrode provided on the first and second regions of the semiconductor multilayer body and the lateral growth film.
Dependencies are inferred from the claim text.