Semiconductor light emitting device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSang Heon HAN, Jong Pa HONG, Seung Hyun KIM, Yun Hee SHIN, Jeong Wook LEE
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Abstract
A method of manufacturing a semiconductor light emitting device, includes: forming a plurality of concave portions on a substrate; injecting silica particles into the plurality of concave portions; and forming a semiconductor layer on the substrate, the semiconductor layer including voids formed in portions of the semiconductor layer, the portions being located above the plurality of concave portions.
Claims20
A method of manufacturing a semiconductor light emitting device, the method comprising:
- forming a plurality of concave portions in a surface of a substrate;
- injecting silica particles into the plurality of concave portions;
- and
- forming a semiconductor layer on the surface of the substrate having the plurality of concave portions, the semiconductor layer comprising a surface having a plurality of voids formed at locations facing the plurality of concave portions.
A semiconductor light emitting device comprising:
- a substrate comprising a surface having a plurality of concave portions in which silica particles are disposed;
- a semiconductor layer disposed on the substrate and comprising a surface having a plurality of voids provided at locations facing the plurality of concave portions;
- a light emitting structure disposed on the semiconductor layer, the light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer;
- and
- first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively.
A semiconductor device comprising:
- a substrate formed of a first material, the substrate comprising a surface having a plurality of grooves formed therein;
- a second material disposed inside the grooves, the second material being different from the first material;
- and
- a semiconductor layer comprising a surface contacting the surface of the substrate at areas between the grooves and being spaced apart from the second material disposed inside the openings.
Dependencies are inferred from the claim text.