Method for Producing a Plurality of Optoelectronic Semiconductor Components in Combination, Semiconductor Component Produced in Such a Way, and Use of Said Semiconductor Component

A method for producing a plurality of optoelectronic semiconductor components in combination, each semiconductor component having a radiation-emitting semiconductor chip, a radiation-detecting semiconductor chip and a frame, the method comprising:

• providing a carrier substrate;
• applying a plurality of radiation-emitting semiconductor chips and radiation-detecting semiconductor chips to the carrier substrate and making electrical contact with them, wherein each radiation-detecting semiconductor chip is assigned to a respective radiation-emitting semiconductor chip;
• potting the plurality of radiation-emitting semiconductor chips with a first potting compound;
• potting the plurality of radiation-detecting semiconductor chips with a second potting compound;
• severing the first and second potting compounds by sawing between adjacent semiconductor chips;
• and
• applying a common frame to the carrier substrate, the common frame having a plurality of chambers open toward the top, wherein the frame is arranged in such a way that a respective semiconductor chip is arranged in a respective chamber of the frame.

An optoelectronic semiconductor component comprising:

• a carrier substrate;
• a frame fixed on the carrier substrate, wherein a first chamber and a second chamber are formed in the frame, the first and second chambers each being open toward the top;
• a radiation-emitting semiconductor chip that has an active layer suitable for generating radiation and is arranged in the first chamber on the carrier substrate, the radiation-emitting semiconductor chip being potted with a first potting compound;
• a radiation-detecting semiconductor chip that has an active layer suitable for detecting radiation and is arranged in the second chamber on the carrier substrate, the radiation-detecting semiconductor chip being potted with a second potting compound;
• and
• an optical barrier formed through the chambers by the frame between the radiation-emitting semiconductor chip and the radiation-detecting semiconductor chip.

An optoelectronic semiconductor component comprising:

• a carrier substrate;
• a frame fixed on the carrier substrate with an adhesive, wherein a first chamber and a second chamber are formed in the frame, the first and second chambers each being open toward the top, wherein the first chamber and the second chamber each have a diaphragm opening in a preferred direction, side surfaces of the diaphragm openings being formed differently obliquely;
• a radiation-emitting semiconductor chip that has an active layer suitable for generating radiation and is arranged in the first chamber on the carrier substrate, the radiation-emitting semiconductor chip being potted with a first potting compound;
• a radiation-detecting semiconductor chip that has an active layer suitable for detecting radiation and is arranged in the second chamber on the carrier substrate, the radiation-detecting semiconductor chip being potted with a second potting compound;
• and
• an optical barrier formed through the chambers by the frame between the radiation-emitting semiconductor chip and the radiation-detecting semiconductor chip.