Graphene structure, graphene device including same, and method of manufacturing graphene structure
AssigneeSamsung Electronics Co., Ltd.
InventorsJoung-real AHN, Ha-chul SHIN, In-kyung SONG
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Abstract
A method of manufacturing a graphene structure, the graphene structure, and a graphene device including the graphene structure, include depositing a metal layer over a silicon carbide substrate; and performing, at a first temperature, a heat treatment on the silicon carbide substrate over which the metal layer is deposited to form a composite layer and a graphene layer on the silicon carbide substrate. The composite layer includes a metal.
Claims25
A method of manufacturing a graphene structure, the method comprising:
- depositing a metal layer over a silicon carbide substrate;
- and
- performing, at a first temperature, a first heat treatment on the silicon carbide substrate over which the metal layer is deposited to form a composite layer and a graphene layer on the silicon carbide substrate, the composite layer including a metal.
A graphene structure, comprising:
- a silicon carbide substrate;
- a graphene layer over the silicon carbide substrate, the graphene layer having an electrically neutral property and being a single layer;
- and
- an inserting layer between the silicon carbide substrate and the graphene layer.
A method of manufacturing a graphene structure, comprising:
- providing a seed layer over a silicon carbide layer, the seed layer including a metal;
- and
- extracting carbon from the silicon carbide layer to form a graphene layer and a graphene support, the graphene support being configured to support the graphene layer,
- the graphene support including the silicon carbide layer and a composite layer, and
- the composite layer containing the metal from the seed layer.
Dependencies are inferred from the claim text.