Vertical gan power device with breakdown voltage control
AssigneeAvogy, Inc.
InventorDonald R. DISNEY
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Abstract
A method for fabricating a vertical GaN power device includes providing a first GaN material having a first conductivity type and forming a second GaN material having a second conductivity type and coupled to the first GaN material to create a junction. The method further includes implanting ions through the second GaN material and into a first portion of the first GaN material to increase a doping concentration of the first conductivity type. The first portion of the junction is characterized by a reduced breakdown voltage relative to a breakdown voltage of a second portion of the junction.
Claims20
A method for fabricating a vertical GaN power device, the method comprising:
- providing a first GaN material having a first conductivity type;
- forming a second GaN material having a second conductivity type and coupled to the first GaN material to create a junction;
- and
- implanting ions through the second GaN material and into a first portion of the first GaN material to increase a doping concentration of the first conductivity type;
- wherein the first portion of the junction is characterized by a reduced breakdown voltage relative to a breakdown voltage of a second portion of the junction.
A vertical GaN power device comprising:
- a first GaN material having a first conductivity type;
- and
- a second GaN material having a second conductivity type and coupled to the first GaN material to form a junction;
- wherein:
- a first portion of the junction includes an implanted region of the first conductivity type;
- the implanted region has a dopant density higher than a dopant density of the first GaN material;
- and
- the first portion of the junction is characterized by a reduced breakdown voltage relative to a breakdown voltage of a second portion of the junction.
A vertical III-nitride power device comprising:
- a junction formed by a first GaN material of a first conductivity type coupled to a second GaN material of a second conductivity type, wherein the junction further includes:
- a device region;
- and
- a controlled breakdown region within the device region, wherein the junction in the controlled breakdown region is characterized by having a lower breakdown voltage than at least a portion of the device region outside of the controlled breakdown region.
Dependencies are inferred from the claim text.