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US 2014/0175444 A1Published application
Semiconductor Device and Manufacturing Method Thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Yasuyuki Arai, Jun Koyama
Life of this patent
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Abstract
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an interlayer insulating film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
Claims42
(canceled)
A liquid crystal display device comprising:
- a first pixel over a first substrate, and comprising:
- a first TFT comprising:
- a first portion of a semiconductor layer;
- a first gate insulating film over the first portion of the semiconductor layer;
- and
- a first gate electrode over the first gate insulating film,
- a capacitor comprising:
- a first layer comprising a second portion of the semiconductor layer;
- a second layer over the first layer, and comprising a same layer as the first gate insulating film;
- and
- a third layer over the second layer, and comprising a same layer as the first gate electrode,
- wherein a third portion of the semiconductor layer extends to a second pixel next to the first pixel, the third portion of the semiconductor layer being contiguous with the first portion of the semiconductor layer,
- a first insulating film comprising silicon nitride, and over and in contact with the first gate electrode and the first gate insulating film;
- a second insulating film comprising an organic insulating material, and over the first insulating film;
- and
- a wiring over the second insulating film, the wiring being connected to the first portion of the semiconductor layer through an opening in both the first insulating film and the second insulating film,
- wherein the first layer, the third layer, and a fourth layer overlap each other, the fourth layer comprising a same layer as the wiring.
14 more elements
A liquid crystal display device comprising:
- a first pixel over a first substrate, and comprising:
- a first TFT comprising:
- a first portion of a semiconductor layer;
- a first gate insulating film over the first portion of the semiconductor layer;
- and
- a first gate electrode over the first gate insulating film,
- a capacitor comprising:
- a first layer comprising a second portion of the semiconductor layer;
- a second layer over the first layer, and comprising a same layer as the first gate insulating film;
- and
- a third layer over the second layer, and comprising a same layer as the first gate electrode,
- a first insulating film comprising silicon nitride, and over and in contact with the first gate electrode and the first gate insulating film;
- a second insulating film comprising an organic insulating material, and over the first insulating film;
- a wiring over the second insulating film, the wiring being connected to the first portion of the semiconductor layer through an opening in both the first insulating film and the second insulating film;
- a pixel electrode over the second insulating film;
- a first columnar spacer and a second columnar spacer over the pixel electrode;
- a transparent conductive film over the first columnar spacer and the second columnar spacer;
- a shielding film over the transparent conductive film;
- and
- a second substrate over the shielding film,
- wherein a size of the first columnar spacer is different from a size of the second columnar spacer, and
- wherein the first layer, the third layer, and a fourth layer overlap each other, the fourth layer comprising a same layer as the wiring.
19 more elements
A liquid crystal display device comprising:
- a first pixel over a first substrate, and comprising:
- a first TFT comprising:
- a first portion of a semiconductor layer;
- a first gate insulating film over the first portion of the semiconductor layer;
- and
- a first gate electrode over the first gate insulating film,
- a capacitor comprising:
- a first layer comprising a second portion of the semiconductor layer;
- a second layer over the first layer, and comprising a same layer as the first gate insulating film;
- and
- a third layer over the second layer, and comprising a same layer as the first gate electrode,
- wherein a third portion of the semiconductor layer extends to a second pixel next to the first pixel, the third portion of the semiconductor layer being contiguous with the first portion of the semiconductor layer,
- a first insulating film comprising silicon nitride, and over and in contact with the first gate electrode and the first gate insulating film;
- a second insulating film comprising an organic insulating material, and over the first insulating film;
- a wiring over the second insulating film, the wiring being connected to the first portion of the semiconductor layer through an opening in both the first insulating film and the second insulating film;
- a pixel electrode over the second insulating film;
- a first columnar spacer and a second columnar spacer over the pixel electrode;
- a transparent conductive film over the first columnar spacer and the second columnar spacer;
- a shielding film over the transparent conductive film;
- and
- a second substrate over the shielding film,
- wherein a size of the first columnar spacer is different from a size of the second columnar spacer, and
- wherein the first layer, the third layer, and a fourth layer overlap each other, the fourth layer comprising a same layer as the wiring.
20 more elements
A liquid crystal display device comprising:
- a liquid crystal panel comprising:
- a first pixel over a first substrate, the first pixel comprising:
- a first TFT comprising:
- a first portion of a semiconductor layer;
- a first gate insulating film over the first portion of the semiconductor layer;
- and
- a first gate electrode over the first gate insulating film,
- a capacitor comprising:
- a first layer comprising a second portion of the semiconductor layer;
- a second layer over the first layer, and comprising a same layer as the first gate insulating film;
- and
- a third layer over the second layer, and comprising a same layer as the first gate electrode,
- wherein a third portion of the semiconductor layer extends to a second pixel next to the first pixel, the third portion of the semiconductor layer being contiguous with the first portion of the semiconductor layer,
- a first insulating film comprising silicon nitride, and over and in contact with the first gate electrode and the first gate insulating film;
- a second insulating film comprising an organic insulating material, and over the first insulating film;
- a wiring over the second insulating film, the wiring being connected to the first portion of the semiconductor layer through an opening in both the first insulating film and the second insulating film,
- a pixel electrode over the second insulating film;
- a first columnar spacer and a second columnar spacer over the pixel electrode;
- a transparent conductive film over the first columnar spacer and the second columnar spacer;
- a shielding film over the transparent conductive film;
- and
- a second substrate over the shielding film,
- wherein a size of the first columnar spacer is different from a size of the second columnar spacer,
- a touch panel adjacent to the liquid crystal panel;
- and
- a LED backlight adjacent to the liquid crystal panel,
- wherein the first layer, the third layer, and a fourth layer overlap each other, the fourth layer comprising a same layer as the wiring.
24 more elements
A liquid crystal display device comprising:
- a first pixel over a first substrate, and comprising:
- a first TFT comprising:
- a first portion of a semiconductor layer;
- a first gate insulating film over the first portion of the semiconductor layer;
- and
- a first gate electrode over the first gate insulating film,
- a capacitor comprising:
- a first layer comprising a second portion of the semiconductor layer;
- a second layer over the first layer, and comprising a same layer as the first gate insulating film;
- and
- a third layer over the second layer, and comprising a same layer as the first gate electrode,
- wherein a third portion of the semiconductor layer extends to a second pixel next to the first pixel, the third portion of the semiconductor layer being contiguous with the first portion of the semiconductor layer,
- a driver circuit over the first substrate, and comprising an n-channel TFT and a p-channel TFT;
- a first insulating film comprising silicon nitride, and over the first TFT, the n-channel TFT and the p-channel TFT;
- a second insulating film comprising an organic insulating material, and over the first insulating film;
- a wiring over the second insulating film, the wiring being connected to the first portion of the semiconductor layer through an opening in both the first insulating film and the second insulating film;
- a pixel electrode over the second insulating film;
- a first columnar spacer and a second columnar spacer over the pixel electrode;
- a transparent conductive film over the first columnar spacer and the second columnar spacer;
- a shielding film over the transparent conductive film;
- and
- a second substrate over the shielding film,
- wherein a size of the first columnar spacer is different from a size of the second columnar spacer,
- wherein the first columnar spacer overlaps with the driver circuit,
- wherein the second columnar spacer overlaps with the first pixel, and
- wherein the first layer, the third layer, and a fourth layer overlap each other, the fourth layer comprising a same layer as the wiring.
23 more elements
Dependencies are inferred from the claim text.