Thin film transistor array panel and manufacturing method thereof
AssigneeSamsung Display Co., Ltd.
InventorsHong-Kee CHIN, Yun Jong Yeo, Sang Gab Kim, Jung-Suk Bang, Byeong Hoon Cho
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Abstract
A thin film transistor array panel includes a substrate, an insulation layer, a first semiconductor, and a second semiconductor. The insulation layer is disposed on the substrate and includes a stepped portion. The first semiconductor is disposed on the insulation layer. The second semiconductor is disposed on the insulation layer and includes a semiconductor material different than the first semiconductor. The stepped portion is spaced apart from an edge of the first semiconductor.
Claims23
A method of manufacturing a thin film transistor array panel, comprising:
- forming a first insulation layer on a substrate;
- forming a first semiconductor material layer on the first insulation layer;
- forming an etching passivation material layer on the first semiconductor material layer;
- forming a first photoresist layer on the etching passivation material layer;
- etching, using the first photoresist layer as a mask, the etching passivation material layer to form an etching passivation layer;
- etching, using the first photoresist layer as a mask, the first semiconductor material layer to form a first semiconductor pattern comprising a protrusion not covered by the etching passivation layer;
- forming, sequentially, a second insulation layer and a second semiconductor material layer on the etching passivation layer and the first semiconductor pattern;
- forming a second photoresist layer on the second semiconductor material layer;
- etching, using the second photoresist layer as a mask, the second semiconductor material layer to form a first semiconductor;
- etching the first insulation layer not covered by the second photoresist layer and the protrusion not covered by the etching passivation layer to form a second semiconductor comprising an undercut region under the etching passivation layer;
- and
- forming, in the first insulation layer, a stepped portion spaced apart from an edge of the second semiconductor.
A thin film transistor array panel, comprising:
- a substrate;
- an insulation layer disposed on the substrate, the insulation layer comprising a stepped portion;
- a first semiconductor disposed on the insulation layer;
- and
- a second semiconductor disposed on the insulation layer, the second semiconductor comprising a semiconductor material different than the first semiconductor,
- wherein the stepped portion is spaced apart from an edge of the first semiconductor.
Dependencies are inferred from the claim text.