Oxide semiconductor film and semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsTatsuya HONDA, Hiroshi KANEMURA, Kengo AKIMOTO, Suzunosuke HIRAISHI
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Abstract
Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film.
Claims18
(canceled)
An oxide semiconductor film comprising indium zinc oxide, the oxide semiconductor film comprising:
- a hexagonal crystal structure in which an a-b plane is substantially parallel to a surface of the oxide semiconductor film;
- and
- a rhombohedral crystal structure in which an a-b plane is substantially parallel to the surface of the oxide semiconductor film.
A semiconductor device comprising:
- a gate electrode;
- an oxide semiconductor film comprising of indium zinc oxide;
- a first insulating film provided between the gate electrode and the oxide semiconductor film;
- a source electrode and a drain electrode provided in contact with the oxide semiconductor film;
- and
- a second insulating film provided over the oxide semiconductor film,
- wherein the oxide semiconductor film includes a hexagonal crystal structure in which an a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which an a-b plane is substantially parallel to the surface of the oxide semiconductor film.
Dependencies are inferred from the claim text.