Thin film transistor, array substrate and display apparatus
AssigneeBoe Technology Group Co., Ltd.
InventorGuangcai Yuan
Life of this patent
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Abstract
A thin film transistor, comprising: a substrate; a first electrode formed on the substrate; a first insulation layer formed on the first electrode; a gate electrode formed on the first insulation layer; a second insulation layer formed on the gate electrode; an active layer penetrating through the first and second insulation layers and electrically isolated from the gate electrode; and a second electrode formed on the active layer and electrically connected to the first electrode through the active layer, wherein the first electrode is one of a source electrode and a drain electrode, and the second electrode is the other of the source electrode and the drain electrode.
Claims13
A thin film transistor, comprising:
- a substrate;
- a first electrode formed on the substrate;
- a first insulation layer formed on the first electrode;
- a gate electrode formed on the first insulation layer;
- a second insulation layer formed on the gate electrode;
- an active layer penetrating through the first and second insulation layers and electrically isolated from the gate electrode;
- and
- a second electrode formed on the active layer and electrically connected to the first electrode through the active layer,
- wherein the first electrode is used as one of a source electrode and a drain electrode, and the second electrode is used as the other of the source electrode and the drain electrode.
Dependencies are inferred from the claim text.