US 2014/0175432 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device includes a transistor including an insulating film, an oxide semiconductor film, a gate electrode overlapping with the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film; a capacitor including a first light-transmitting conductive film over the insulating film, a dielectric film over the first light-transmitting conductive film, and a second light-transmitting conductive film over the dielectric film; an oxide insulating film over the pair of electrodes of the transistor; and a nitride insulating film over the oxide insulating film. The dielectric film is the nitride insulating film, the oxide insulating film has a first opening over one of the pair of electrodes, the nitride insulating film has a second opening over the one of the pair of electrodes, and the second opening is on an inner side than the first opening.

Claims20

Dependent claims

A semiconductor device comprising:

a transistor, the transistor including:
a first insulating film;
an oxide semiconductor film over the first insulating film;
and
a gate electrode adjacent to the oxide semiconductor film;
a capacitor, the capacitor including:
a first light-transmitting conductive film over the first insulating film;
a nitride insulating film over the first light-transmitting conductive film;
and
a second light-transmitting conductive film over the nitride insulating film;
and
an oxide insulating film over the oxide semiconductor film, the gate electrode, and the first light-transmitting conductive film,
wherein the second light-transmitting conductive film is electrically connected to the oxide semiconductor film, and
wherein the nitride insulating film is positioned over the oxide insulating film and is in contact with the first light-transmitting conductive film.

11 more elements

A semiconductor device comprising:

a transistor, the transistor including:
a gate electrode;
an insulating film over the gate electrode;
an oxide semiconductor film over the insulating film;
and
a pair of electrodes in contact with the oxide semiconductor film;
a capacitor, the capacitor including:
a first light-transmitting conductive film over the insulating film;
a dielectric film over the first light-transmitting conductive film;
and
a second light-transmitting conductive film over the dielectric film;
an oxide insulating film over the pair of electrodes of the transistor;
and
a nitride insulating film over the oxide insulating film,
wherein the dielectric film included in the capacitor is the nitride insulating film,
wherein the oxide insulating film has a first opening over each of one of the pair of electrodes and the first light-transmitting conductive film,
wherein the nitride insulating film has a second opening over the one of the pair of electrodes,
wherein the second opening is on an inner side than the first opening over the one of the pair of electrodes, and
wherein the second light-transmitting conductive film included in the capacitor is connected to the one of the pair of electrodes included in the transistor in the second opening over the one of the pair of electrodes.

16 more elements

A semiconductor device comprising:

a transistor, the transistor including:
a gate electrode;
an insulating film over the gate electrode;
an oxide semiconductor film over the insulating film;
and
a pair of electrodes in contact with the oxide semiconductor film;
a capacitor, the capacitor including:
a first light-transmitting conductive film over the insulating film;
a dielectric film over the first light-transmitting conductive film;
and
a second light-transmitting conductive film over the dielectric film;
an oxide insulating film over the pair of electrodes of the transistor;
and
a nitride insulating film over the oxide insulating film,
wherein the dielectric film included in the capacitor is the nitride insulating film,
wherein the second light-transmitting conductive film included in the capacitor is connected to one of the pair of electrodes included in the transistor, and
wherein a hydrogen concentration of the oxide semiconductor film is different from a hydrogen concentration of the first light-transmitting conductive film.

14 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20