Thin film transistor and manufacturing method thereof, array substrate, and display device
AssigneeBeijing Boe Optoelecronics Technology Co., Ltd.
InventorsZHENYU XIE, SHAOYING XU, TIANSHENG LI, CHANGJIANG YAN, JING LI, ZONGMIN TIAN
Life of this patent
Estimating the term…
Abstract
The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer.
Claims8
A thin film transistor, comprising:
- a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer.
Dependencies are inferred from the claim text.