Thin film transistor
AssigneeHon Hai Precision Industry Co., Ltd.
InventorJIAN-SHIHN TSANG
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Abstract
A thin film transistor includes a substrate and a channel layer formed on an upper surface of the substrate. A source electrode and a drain electrode are formed on an upper surface of the channel layer and located at two opposite ends of the upper surface of the channel layer. A gate insulating layer is located in a middle portion of the upper surface of the channel layer. A gate electrode is located on an upper surface of the gate insulating layer. The thin film transistor further includes a first organic air block layer. The first organic air block layer is formed between the substrate and the channel layer.
Claims20
A thin film transistor, comprising:
- a substrate;
- a channel layer formed on an upper surface of the substrate;
- a source electrode and a drain electrode formed on an upper surface of the channel layer and located at two opposite ends of the upper surface of the channel layer;
- a gate insulating layer located in a middle portion of the upper surface of the channel layer;
- and
- a gate electrode located on an upper surface of the gate insulating layer;
- wherein a first organic air block layer is formed between the substrate and the channel layer.
A thin film transistor, comprising:
- a substrate;
- a gate electrode formed on an upper surface of the substrate and located in a middle portion of the upper surface of the substrate;
- a gate insulating layer formed on an upper surface of the substrate and covering the gate electrode;
- a channel layer formed on an upper surface of the gate insulating layer;
- and
- a source electrode and a drain electrode formed on an upper surface of the channel layer and located at two opposite ends of the upper surface of the channel layer;
- wherein
- a first organic air block layer is formed between the gate insulating layer and the channel layer.
Dependencies are inferred from the claim text.