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US 2014/0175423 A1Published application
Thin film transistor array panel and method of manufacturing the same
AssigneeSamsung Display Co., Ltd.
InventorsChang-Oh JEONG, Kyung Seop KIM, Hong Long NING, Byeong-Beom KIM, Joon Yong PARK, Jin Ho HWANG, Dong Min LEE
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Abstract
A thin film transistor array panel is provided. The thin film transistor array panel includes a substrate, a seed layer positioned on the substrate, and a semiconductor layer positioned on the seed layer, wherein a lattice mismatch between the seed layer and the semiconductor layer is equal to or less than 1.4%.
Claims18
A thin film transistor array panel, comprising:
- a substrate;
- a seed layer positioned on the substrate;
- and
- a semiconductor layer positioned on the seed layer,
- wherein a lattice mismatch between the seed layer and the semiconductor layer is equal to or less than 1.4%.
2 more elements
A method of manufacturing a thin film transistor array panel, comprising:
- forming a gate electrode on a substrate;
- forming a gate insulating layer on the substrate to cover the gate electrode;
- forming a seed material layer on the gate insulating layer;
- forming a semiconductor material layer on the seed material layer;
- forming a first photosensitive film pattern on the semiconductor material layer;
- forming a semiconductor layer and a seed layer by patterning the semiconductor material layer and the seed material layer using the first photosensitive film pattern as a first etch mask;
- removing the first photosensitive film pattern;
- forming a data wiring material layer on the gate insulating layer to cover the semiconductor layer;
- forming a second photosensitive film pattern on the data wiring material layer;
- and
- forming a source electrode and a drain electrode facing the source electrode, by patterning the data wiring material layer using the second photosensitive film pattern as a second etch mask.
8 more elements
Dependencies are inferred from the claim text.