Deposition of Rutile Films with Very High Dielectric Constant
AssigneeIntermolecular, Inc.
InventorsSergey Barabash, Dipankar Pramanik
Life of this patent
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Abstract
Anisotropic materials, such as rutile TiO2, can exhibit dielectric constant of 170 along the tetragonal axis of (001) direction, and dielectric constant of 86 along directions perpendicular to the tetragonal axis. Layer of anisotropic material nanorods, such as TiO2 nanorods, can form a seed layer to grow a dielectric layer that can exhibit the higher dielectric constant value in a direction parallel to the substrate surface. The anisotropic layer can then be patterned to expose a surface normal to the high dielectric constant direction. A conductive material can be formed in contact with the exposed surface to create an electrode/dielectric stack along the direction of high dielectric constant.
Claims20
A method comprising
- depositing nanorods of an anisotropic dielectric material on a substrate surface,
- wherein the nanorods form a first layer,
- wherein the first layer is parallel to the substrate surface,
- wherein the nanorods are arranged in a direction parallel to each other,
- wherein the nanorods have a first crystal orientation,
- wherein the nanorods have a higher dielectric constant along the first crystal orientation than in an orientation perpendicular to the first crystal orientation;
- forming a second layer of the dielectric material on the first layer,
- wherein the second layer comprises substantially the same crystal orientation as the first crystal orientation;
- patterning the second layer to expose a side surface of the second layer,
- wherein the side surface is substantially perpendicular to the substrate surface,
- wherein the side surface is substantially perpendicular to the first crystal orientation;
- forming a conductive layer in contact with the side surface,
- wherein the conductive layer is operable as an electrode.
A method comprising
- forming multiple grooves in a substrate;
- depositing nanorods of an anisotropic dielectric material in the grooves,
- wherein the nanorods form a first layer,
- wherein the first layer is parallel to the substrate surface,
- wherein the nanorods are arranged in a direction parallel to each other,
- wherein the nanorods have a first crystal orientation,
- wherein the nanorods have a higher dielectric constant along the first crystal orientation than in an orientation perpendicular to the first crystal orientation;
- depositing a second layer of the dielectric material on the first layer;
- annealing the deposited second layer,
- wherein the annealed second layer comprises substantially the same crystal orientation as the first crystal orientation;
- patterning the second layer to expose a side surface of the second layer,
- wherein the side surface is substantially perpendicular to the substrate surface,
- wherein the side surface is substantially perpendicular to the first crystal orientation;
- wherein the side surface is substantially parallel to each other;
- forming a conductive layer in contact with the side surface,
- wherein the conductive layer is operable as an electrode.
A device comprising
- a TiO2 dielectric layer on a substrate,
- wherein the TiO2 dielectric layer has a higher dielectric constant along the first crystal orientation than in an orientation perpendicular to the first crystal orientation,
- wherein the first crystal orientation is parallel to the substrate surface;
- wherein the TiO2 dielectric layer is patterned to expose a side surface,
- wherein the side surface is substantially perpendicular to the substrate surface;
- a conductive layer in contact with the side surface.
Dependencies are inferred from the claim text.