US 2014/0175378 A1 · EPITAXIAL FILM GROWTH ON PATTERNED SUBSTRATE

Epitaxial film growth on patterned substrate

AssigneeIntel Corporation

InventorsNiti Goel, Niloy Mukherjee, Seung Hoon Sung, Van Le, Matthew Metz, Jack Kavalieros, RAVI PILLARISETTY, Sanaz Gardner, SANSAPTAK DASGUPTA, Willy Rachmady, BENJAMIN CHU-KUNG, MARKO RADOSAVLJEVIC, Gilbert Dewey, Marc French, JESSICA KACHIAN, SATYARTH SURI, Robert Chau

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Abstract

An embodiment includes depositing a material onto a substrate where the material includes a different lattice constant than the substrate (e.g., III-V or IV epitaxial (EPI) material on a Si substrate). An embodiment includes an EPI layer formed within a trench having walls that narrow as the trench extends upwards. An embodiment includes an EPI layer formed within a trench using multiple growth temperatures. A defect barrier, formed in the EPI layer when the temperature changes, contains defects within the trench and below the defect barrier. The EPI layer above the defect barrier and within the trench is relatively defect free. An embodiment includes an EPI layer annealed within a trench to induce defect annihilation. An embodiment includes an EPI superlattice formed within a trench and covered with a relatively defect free EPI layer (that is still included in the trench). Other embodiments are described herein.

Claims25

Dependent claims

An apparatus comprising:

a trench, having a top and a bottom, in an insulation layer that is on a substrate having a first lattice constant;
wherein (a) the trench extends downwards towards the substrate;
(b) the trench has a lower width adjacent the trench bottom and an upper width above the lower width, and (c) the upper width is narrower than the lower width;
and
a lower epitaxial (EPI) layer, having a second lattice constant mismatched with the first lattice constant, in the trench adjacent the trench bottom and below the trench upper width.

2 more elements

Dependencies are inferred from the claim text.