Reduced Scale Resonant Tunneling Field Effect Transistor
AssigneeIntel Corporation
InventorsUygar E. Avci, Dmitri Nikonov, Ian Young
Life of this patent
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Abstract
An embodiment includes a heterojunction tunneling field effect transistor including a source, a channel, and a drain; wherein (a) the channel includes a major axis, corresponding to channel length, and a minor axis that corresponds to channel width and is orthogonal to the major axis; (b) the channel length is less than 10 nm long; (c) the source is doped with a first polarity and has a first conduction band; (d) the drain is doped with a second polarity, which is opposite the first polarity, and the drain has a second conduction band with higher energy than the first conduction band. Other embodiments are described herein.
Claims20
An apparatus comprising:
- a heterojunction tunneling field effect transistor including a source, a channel, and a drain;
- wherein (a) the channel includes a major axis, corresponding to channel length, and a minor axis that corresponds to channel width and is orthogonal to the major axis;
- (b) the channel length is less than 10 nm long;
- (c) the source is doped with a first polarity and has a first conduction band;
- (d) the drain is doped with a second polarity, which is opposite the first polarity, and the drain has a second conduction band with higher energy than the first conduction band.
An apparatus comprising:
- a heterojunction tunneling field effect transistor including a source, a channel, and a drain;
- wherein the channel length is less than 10 nm long;
- the drain has conduction band with higher energy than a conduction band of the source;
- and the transistor includes a subthreshold gate voltage to drain current ratio, which occurs between transition from off state to on state, less than 30 mV/dec.
An apparatus comprising:
- a substrate;
- a first heterojunction tunneling field effect transistor (heTFET) including a first source, a first channel, and a first drain;
- wherein the first channel length is less than 10 nm long, the first drain has conduction band with higher energy than a conduction band of the first source, and the heTFET is formed on the substrate;
- and
- a second heTFET including a second source, a second channel, and a second drain;
- wherein the second drain has conduction band with lower energy than a conduction band of the second source, and the second heTFET is formed on the substrate.
Dependencies are inferred from the claim text.