Phase-change random access memory device and method of manufacturing the same

A method of fabricating a phase-change random access memory (PRAM) device, the method comprising:

• providing a semiconductor substrate in which a lower electrode is formed;
• performing reduction treatment on an upper surface of the lower electrode to form a void in a portion of the upper surface of the lower electrode;
• and
• forming a phase-change layer on the lower electrode.

A phase-change random access memory (PRAM) device, comprising:

• a semiconductor substrate;
• a switching device formed on the semiconductor substrate;
• a lower electrode formed on the switching device and having an upper surface of the lower electrode having a void;
• and
• a phase-change layer configured to be formed on the lower electrode having the void, wherein the void is formed to substantially reduce a coupling area between the upper surface and the phase-change layer.

A method of fabricating a phase-change random access memory (PRAM) device, the method comprising:

• providing a semiconductor substrate;
• forming a lower electrode on the semiconductor substrate;
• performing reduction treatment on an upper surface of the lower electrode to farm a void in a portion of the upper surface of the lower electrode;
• and
• forming a phase-change layer on the lower electrode, wherein the void is formed to substantially reduce a coupling area between the upper surface and the phase-change layer.