Materials for Thin Resisive Switching Layers of Re-RAM Cells

A method of forming a resistive random access memory cell, the method comprising:

• forming a first layer operable as a first electrode;
• forming a second layer over the first layer,
• the second layer comprising a resistive switching material,
• the resistive switching material comprising a metal oxide having,
• the concentration of oxygen vacancies in the metal oxide being less than 5 atomic percent,
• the second layer having a thickness of less than 50 Angstroms;
• and
• forming a third layer over the second layer, the third layer operable as a second electrode.

A resistive random access memory cell comprising:

• a first layer operable as a first electrode,
• the first layer comprising n-doped polysilicon;
• a second layer comprising a resistive switching material,
• the resistive switching material is represented by a formula Ta2O5-XNY such that Y<(X−0.01),
• the resistive switching material comprises oxygen vacancies,
• a concentration of oxygen vacancies in the resistive switching material being less than 5 atomic percent,
• the second layer having a thickness of less than 50 Angstroms;
• and
• a third layer operable as a second electrode,
• the third layer comprising a titanium nitride having a thickness of less than 1,000 Angstroms,
• wherein the second layer is positioned between the first layer and the third layer.